AO3407
30V P-Channel Enhancement Mode MOSFET
(TA = 25oC unless otherwise noted)
ELECTRICAL CHARACTERISTICS
Min.
Symbol
Typ.
Miax.
Unit
V
Parameter
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
BVDSS
RDS(on)
RDS(on)
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.1A
VGS = -4.5V, ID = -3A
-30
48.0
64.0
64.5
87.0
mW
VGS(th)
IDSS
IGSS
gfs
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 20V, VDS = 0V
-1
V
uA
nA
S
-3.0
-1
-1.0
± 100
Forward Transconductance
Dynamic
4A
VDS = -5V, ID = -
5.5
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
9.35
3.43
VDS = -15V , ID =-5.3A
VGS = -10V
Gate-Source Charge
Gate-Drain Charge
nC
ns
1.7
Turn-On Delay Time
10.8
VDD =-15V, RL=15Ω
ID = -1A, VGEN = -10V
RG = 6W
Turn-On Rise Time
2.33
Turn-Off Delay Time
22.53
3.87
td(off)
tf
Turn-Off Fall Time
Input Capacitance
Ciss
Coss
Crss
551.57
90.96
60.79
VDS = -15V, VGS = 0V
f = 1.0 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
IS
-2.6
-1.3
A
V
VSD
I =
A, VGS = 0V
2.6
S
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
