AO3401
30V P-Channel Enhancement Mode MOSFET
V
DS
= -30V
R
DS(ON)
, V
gs
@-10V, I
ds
@-4.2A < 64m
Ω
R
DS(ON)
, V
gs
@-4.5V, I
ds
@-4.0A < 75m
Ω
R
DS(ON)
, V
gs
@-2.5V, I
ds
@-1.0A < 120mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.65
2.95
1.50
1.70
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
S
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
C
TA = 75
o
C
P
D
T
J
, T
stg
R
θ
JA
-30
±12
-4.2
-30
1.4
1
-55 to 150
125
o
V
A
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
W
o
C
C/W
１
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semiconductor
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