A92
SOT-89-3L
TRANSISTOR (PNP)
FEATURES
Low Collector-Emitter Saturation Voltage
High Breakdown Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MARKING: A92
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-310
-305
-5
-500
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
Min
-310
-305
-5
-0.25
-0.25
-5
-0.1
60
100
60
-0.2
-0.9
50
V
V
MHz
300
Typ
Max
Unit
V
V
V
µA
µA
µA
µA
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-200V,I
E
=0
V
CE
=-200V,I
B
=0
V
CE
=-300V,I
B
=0
V
EB
=-5V,I
C
=0
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-80mA
I
C
=-20mA,I
B
=-2mA
I
C
=-20mA,I
B
=-2mA
V
CE
=-20V,I
C
=-10mA,f=30MHz
Emitter cut-off current
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
