2SK3018
N-Channel Enhancement Mode MOSFET
• Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this
device ideal for portable equipment.
4) Easily designed drive circuits.
5) Easy to parallel.
• External dimensions
③
②
①
①
②
③
• Applications
Interfacing, switching (30V, 100mA)
Units:mm
• Structure
Silicon N-channel
MOSFET
SOT-23
SOT-323
①.
Gate
②.
Source
③.
Drain
• Absolute maximum ratings (Ta = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Reverse
current
drain
Continuous
Pulsed
Continuous
Pulsed
• Equivalent circuit
Limits
30
20
100
200
100
200
200
150
-55~+150
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
*Gate
Protection
Diode
Symbol
V
DSS
V
GSS
I
D
I
DP*1
I
DR
I
DRP*1
P
D*2
Tch
Tstg
Drain
Gate
Total power dissipation(Tc=25°C)
Channel temperature
Storage temperature
Source
*
1Pw≤10µs,Duty Cycle≤50%
*2With each pin mounted on the recommended lands
*A protection diode is included between the
gate and the source terminals to protect the
diode against static electricity when the product
is in use. Use a protection circuit when the fixed
voltages are exceeded.
１
JinYu
semiconductor
www.htsemi.com
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HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
