2SD
965A
TRANSISTOR (NPN)
FEATURES
Audio amplifier
Flash unit of camera
Switching circuit
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
SOT-89
1. BASE
2. COLLECTOR
Value
40
30
7
5
750
150
-55-150
Units
V
V
V
A
mW
℃
℃
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE’(2)
h
FE(3)
Collector-emitter saturation voltage
Transition frequency
Out capacitance
V
CE(sat)
f
T
Cob
Test
conditions
MIN
40
30
7
0.1
0.1
200
230
150
1
150
50
V
MHz
pF
800
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=0.1mA, I
E
=0
I
C
= 1mA. I
B
=0
I
E
= 10μA, I
C
=0
V
CB
= 10V,I
E
=0
V
EB
=7V, I
C
=0
V
CE
= 2 V, I
C
=1mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
=2A
I
C
=3A, I
B
=0.1A
V
CE
=6V, I
C
=50mA
V
CB
=20 V , I
E
=0, f=1MH
Z
CLASSIFICATION OF
Rank
Range
h
FE(2)
Q
230-380
R
340-600
S
560-800
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
