2SD2413
TRANSISOR (NPN)
FEATURES
High collector to base voltage V
CBO
High collector to emitter voltage V
CEO
Large collector power dissipation P
C
Low collector to emitter saturation voltage V
CE(sat)
Marking:1S
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
400
400
5
100
500
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
I
C
=100μA, I
E
=0
I
C
=0.5mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=400V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=5V, I
C
=30mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=30V, I
C
=20mA, f=200MHz
V
CB
= 30V, I
E
=0, f=1MHz
40
7
30
1.5
1.5
V
V
MHz
pF
conditions
MIN
400
400
5
50
50
TYP
MAX
UNIT
V
V
V
μA
μA
１
JinYu
semiconductor
www.htsemi.com
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