2S
D1664
TRANSISTOR (NPN)
FEATURES
Low V
CE(sat)
, V
CE(sat)
=0.15V(typical).(I
C
/I
B
=500mA/50mA)
Complements to 2SB1132
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base
Voltage
Value
40
32
5
1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector power dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=20V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=100mA
I
C
=0.5A, I
B
=50mA
V
CE
=5V, I
C
=50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
150
15
82
conditions
MIN
40
32
5
0.5
0.5
390
0.4
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
Marking
h
FE
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
