2SD1119
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
40
25
7
3
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
TRANSISTOR (NPN)
FEATURES
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory operation performances at high efficiency with the low
voltage power supply.
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
f
T
C
ob
V
CE
=2V, I
C
=2A
I
C
=3A, I
B
=0.1A
V
CE
=6V, I
C
=50mA, f=200MHz
V
CB
=20V, f=1MHz
150
50
150
1
V
MHz
pF
Test
conditions
MIN
40
25
7
0.1
0.1
230
600
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=10V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=2V, I
C
=500mA
CLASSIFICATION OF
Rank
Range
Marking
1
JinYu
h
FE(1)
Q
230-380
TQ
R
340-600
TR
semiconductor
www.htsemi.com