2SC5343
TRANSISTOR (NPN)
FEATURES
Excellent h
FE
Linearity
Low Noise.
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
b
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Base Current -Continuous
SOT-23
1. BASE
Value
60
50
5
150
50
0.2
150
-55-150
Units
V
V
V
mA
mA
W
℃
℃
2. EMITTER
3. COLLECTOR
Collector Power dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
f
T
C
ob
NF
Test
conditions
MIN
60
50
5
0.1
0.1
70
0.1
80
3.5
10
700
0.25
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=10mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=2mA
I
C
=100mA,I
B
=10mA
V
CE
=10V,I
C
=1mA
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=6V,I
c
=0.1mA,
f=1KHZ,Rg=10KΩ
CLASSIFICATION OF
Rank
Range
h
FE
O
70-140
Y
120-240
G
200-400
L
300-700
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
