2SC4116
TRANSISTOR (NPN)
FEATURES
High voltage and high current
Excellent h
FE
linearity
High h
FE
Low noise
Complementary to 2SA1586
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Junction and Storage Temperature
Value
60
50
5
150
100
150
-55-150
Units
V
V
V
mA
mW
℃
℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
NF
Test
conditions
MIN
60
50
5
0.1
0.1
70
700
0.25
80
3.5
10
V
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=6V,I
C
=2mA
I
C
=100mA,I
B
=10mA
V
CE
=10V,I
C
=1mA,
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=6V,I
c
=0.1mA,
f=1KH
Z
,Rg=10KΩ
CLASSIFICATION OF h
FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
