2SC4097
TRANSISTOR (NPN)
FEATURES
High I
CMax
. I
CMax
=0.5A
Low V
CE(sat)
.Optimal for low voltage operation.
Complements the 2SA1577
SOT-323
3
1
2
1. BASE
2. EMITTER
MAXIMUM RATINGS (T
A
=25℃unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
32
5
500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Test
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=20V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=3V,I
C
=10mA
I
C
=500mA, I
B
=50mA
V
CE
=5V, I
C
=20mA,f =100MHz
V
CB
=10V,I
E
=0,f=1MHZ
250
6
82
conditions
MIN
40
32
5
1
1
390
0.4
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
MARKING
h
FE
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
