2SC2715
TRANSISTOR (NPN)
FEATURES
SOT-23
1.
BASE
High Power Gain
Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
4
50
350
150
-55-150
Units
V
V
V
mA
mW
℃
℃
2.
EMITTER
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Power Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
Test
I
C
=
10
μA,
I
E
=0
I
C
=
1
mA, I
B
=0
I
E
=
10
μA,
I
C
=0
V
CB
=35V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=12V, I
C
=2mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
10
mA, I
B
=
1
mA
V
CE
=10V, I
C
=
1
mA
V
CE
=
6
V, I
C
=
1
mA, f=
10.7M
HZ
100
27
conditions
MIN
TYP
MAX
UNIT
V
V
V
35
30
4
0.1
0.1
40
240
0.4
1
400
33
μA
μA
V
V
MHz
dB
f
T
Gpe
CLASSIFICATION OF
Rank
Range
Marking
１
JinYu
h
FE(1)
R
40-80
RR1
O
70-140
RO1
Y
120-240
RY1
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
