2SC2714
TRANSISTOR (NPN)
FEATURES
Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
100
125
-55-+125
Units
V
V
V
mA
mW
℃
℃
SOT-23
1.
BASE
2.
EMITTER
3.
COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
f
T
C
re
NF
Test
conditions
MIN
40
30
4
0.5
0.5
40
550
0.7
2.5
5
200
MHz
pF
dB
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=10μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10μA,I
C
=0
V
CB
=18V,I
E
=0
V
EB
=4V,I
C
=0
V
CE
=6V,I
C
=1mA
V
CE
=6V,I
C
=1mA
V
CB
=6V,I
E
=0,f=1MHz
V
CE
=6V,I
c
=1mA,f=100MHZ
CLASSIFICATION OF
Rank
Range
Marking
h
FE
R
40-80
QR
O
70-140
QO
Y
100-200
QY
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
