2SC1766
TRANSISTOR(NPN)
FEATURES
Small Flat Package
High Speed Switching Time
Low Collector-emitter saturation voltage
APPLICATIONS
Power Amplifier
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
*
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
Min
50
50
5
0.1
0.1
70
20
0.5
1.2
120
V
V
MHz
240
Typ
Max
Unit
V
V
V
µA
µA
I
C
=100µA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100µA,I
C
=0
V
CB
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
I
C
=1A,I
B
=50mA
I
C
=1A,I
B
=50mA
V
CE
=2V,I
C
=0.5A,f=100MHz
CLASSIFICATION OF h
FE(1)
RANK
RANGE
MARKING
P
82–180
P1766
Q
120–270
Q1766
Y
180–390
Y1766
*Pulse test: pulse width
≤300μs,
duty cycle≤ 2.0%.
1
JinYu
semiconductor
www.htsemi.com