2SC1654
TRANSISTOR(NPN)
SOT–23
FEATURES
High Frequency Power Amplifier Application
Power Swithing Applications
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
180
160
5
50
150
833
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
Min
180
160
5
0.1
0.1
90
70
0.3
1
120
2.3
V
V
MHz
pF
400
Typ
Max
Unit
V
V
V
µA
µA
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=130V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=3V, I
C
=15mA
V
CE
=3V, I
C
=1mA
I
C
=50mA, I
B
=5mA
I
C
=50mA, I
B
=5mA
V
CE
=10V,I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE(1)
RANK
RANGE
MARKING
N5
90–180
N5
N6
135–270
N6
N7
200–400
N7
１
JinYu
semiconductor
www.htsemi.com
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
