2SB7 66
TRANSISTOR(PNP)
SOT-89
1.
BASE
FEATURES
Large collector power dissipation P
C
Complementary to 2SD874
2.
COLLECTOR
3.
EMITTER
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-25
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=-5V, I
C
=-1A
I
C
=-500mA, I
B
=-50mA
I
C
=-500mA, I
B
=-50mA
V
CE
=-10V, I
C
=-50mA, f=200MHz
V
CB
=-10V, I
E
=0, f=1MHz
50
-0.2
-0.85
200
20
30
-0.4
-1.2
V
V
MHz
pF
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Test
I
C
=-10μA, I
E
=0
I
C
=-2mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-500mA
85
conditions
MIN
-30
-25
-5
-0.1
-0.1
340
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
Marking
１
JinYu
h
FE(1)
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
semiconductor
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