2SB624
TRANSISTOR(PNP)
SOT-23
1.BASE
FEATURES
High DC current gain. h
FE
:200 TYP.(V
CE
=-1V,I
C
=-100mA)
Complimentary to 2SD596.
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Value
-30
-25
-5
-700
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
*
h
FE(2)
*
V
CE(sat)
*
V
BE
*
Test
conditions
I
E
=0
MIN
-30
-25
-5
-0.1
-0.1
110
50
-0.6
-0.6
160
17
-0.7
V
V
MHz
pF
400
TYP
MAX
UNIT
V
V
V
I
C
=-100
μ
A,
I
C
= -1mA, I
B
=0
I
E
= -100
μ
A, I
C
=0
V
CB
=-30 V , I
E
=0
V
EB
= -5V ,
V
CE
= -1V,
V
CE
=-1V,
I
C
=0
I
C
= -100mA
I
C
= -700mA
μ
A
μ
A
I
C
=-700 mA, I
B
= -70mA
V
CE
=-6V, I
C
=-10mA
V
CE
= -6V,
I
C
= -10mA
f
T
Cob
V
CB
=-6V,I
E
=0,f=1MH
Z
*
Pulse test : Pulse width
≤350μs,Duty
Cycle≤2%.
CLASSIFICATION OF h
FE(1)
Marking
Range
１
JinYu
BV1
110-180
BV2
135-220
BV3
170-270
BV4
200-320
BV5
250-400
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
