2SB1 308
TRANSISTOR
SOT-89-3L
1. BASE
FEATURES
Power Transistor
Excellent DC current Gain
Low Collector-emitter Saturation Voltage
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-3
500
250
150
-55~+150
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
C
ob
f
T
Test
conditions
Min
-30
-20
-6
-0.5
-0.5
82
60
120
390
-0.45
V
pF
MHz
Typ
Max
Unit
V
V
V
µA
µA
I
C
=-50µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-50µA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-2V, I
C
=-0.5A
I
C
=-1.5A,I
B
=-0.15A
V
CB
=-20V,I
E
=0, f=1MHz
V
CE
=-6V,I
C
=-50mA,
f=30MHz
CLASSIFICATION OF h
FE
RANK
RANGE
MARKING
P
82–180
BFP
Q
120–270
BFQ
R
180–390
BFR
１
JinYu
semiconductor
www.htsemi.com
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