2SB1 1 8 9
TRANSISTOR(PNP)
FEATURES
High breakdown voltage
Complements to 2SD1767
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-0.7
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-80
-80
-5
-0.5
-0.5
82
390
-0.4
100
20
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-50μA,I
E
=0
I
C
=-2mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-10V,I
C
=-50mA,f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
１
JinYu
h
FE
P
82-180
BDP
Q
120-270
BDQ
R
180-390
BDR
semiconductor
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