2SB1 1 8 8
TRANSISTOR(PNP)
SOT-89
FEATURES
Low V
CE(sat)
.
Complements the 2SD1766
1. BASE
1
2. COLLECTOR
2
3. EMITTER
3
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base
Voltage
Value
-40
-32
-5
-2
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
Test
conditions
MIN
-40
-32
-5
-1
-1
82
390
-0.8
100
50
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-50μA , I
E
=0
I
C
= -1mA , I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-20 V , I
E
=0
V
EB
=-4 V ,
V
CE
=-3V,
I
C
=0
I
C
= -0.5A
I
C
=-2A, I
B
= -0.2A
V
CE
=-5V, I
C
=-0.5A ,f=30MHz
V
CB
=-10V, I
E
=0 ,f=1MHz
f
T
C
ob
OF
h
FE
P
82-180
BCP
*
Measured using pulse current.
CLASSIFICATION
Rank
Range
Marking
１
JinYu
Q
120-270
BCQ
R
180-390
BCR
semiconductor
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