2SB1 1 32
TRANSISTOR (PNP)
FEATURES
Low V
CE(sat)
: -0.2V(Typ) I
C
/I
B
=-500mA/-50mA
Compliments 2SD1664
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-40
-32
-5
-0.5
-0.5
82
-0.2
150
20
30
390
-0.5
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-50μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-5V,I
C
=-50mA,f=30MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
BAP
Q
120-270
BAQ
R
180-390
BAR
１
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semiconductor
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