2SB1 1 97
TRANSISTOR(PNP)
SOT-23
Unit : mm
1. BASE
FEATURES
Low V
CE(sat)
.V
CE(sat)
<-0.5V(I
C
/ I
B
= -0.5A /-50mA)
I
C
=-0.8A.
Complements the 2SD1781.
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-0.8
200
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Test
conditions
I
E
=0
MIN
-40
-32
-5
-0.5
-0.5
82
390
-0.5
50
200
12
30
V
MHz
pF
TYP
MAX
UNIT
V
V
V
I
C
=-50
μ
A,
I
C
= -1mA, I
B
=0
I
E
= -50
μ
A, I
C
=0
V
CB
=-20V,I
E
=0
V
EB
= -4V,I
C
=0
V
CE
=-3V,I
C
= -100mA
I
C
=-500 mA, I
B
= -50mA
V
CE
=-5V, I
C
= -50mA,
f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
μ
A
μ
A
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
Marking
P
82-180
AHP
Q
120-270
AHQ
R
180-390
AHR
１
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