2SB1 07 3
TRANSISTOR
FEATURES
Low collector-emitter saturation voltage V
CE(sat)
Large peak collector current I
C
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-20
-7
-4
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
conditions
MIN
-30
-20
-7
-0.1
-0.1
120
315
-1
120
40
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-10μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-30V,I
E
=0
V
EB
=-7V,I
C
=0
V
CE
=-2V,I
C
=-2A
I
C
=-3A,I
B
=-100mA
V
CE
=-6V,I
C
=-50mA,f=200MHz
V
CB
=-20V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
Marking
h
FE
Q
120-205
IQ
R
180-315
IR
１
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semiconductor
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