2SA1 57 7
TRANSISTOR(PNP)
SOT-323
FEATURES
Large I
C
.
CMax.
=-500mA
Low V
CE(sat)
.Ideal for low-voltage operation.
Complements the 2SC4097.
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-32
-5
-500
200
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
Test
I
C
=-100μA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100μA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-10mA
I
C
= -100mA, I
B
=-10mA
V
CE
=-5V, I
C
=-20mA ,f =100MHz
V
CB
=-10V,I
E
=0,f=1MHz
200
7
82
conditions
MIN
-40
-32
-5
-1
-1
390
-0.4
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
MARKING
h
FE
P
82-180
HP
Q
120-270
HQ
R
180-390
HR
１
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semiconductor
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