2SA1 235A
TRANSISTOR(PNP)
SOT–23
FEATURES
Low Collector Current
Low Collector Power Dissipation
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
1. BASE
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-60
-50
-6
-200
200
625
150
-55�½�+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test
conditions
Min
-60
-50
-6
-100
-100
150
90
-0.3
-1
200
4
V
V
MHz
pF
500
Typ
Max
Unit
V
V
V
nA
nA
I
C
=-100μA, I
E
=0
I
C
=-0.1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-60V, I
E
=0
V
EB
=-6V, I
C
=0
V
CE
=-6V, I
C
=-1mA
V
CE
=-6V, I
C
=-0.1mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-6V,I
C
=-10mA
V
CB
=-6V, I
E
=0, f=1MHz
CLASSIFICATION OF
h
FE(1)
RANK
RANGE
MARKING
M·E
150–300
M·E
M·F
250–500
M·F
１
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semiconductor
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