2N7002
N-Channel Enhancement Mode MOSFET
Feature
60V/0.5A,
R
DS(ON)
= 7500mΩ(MAX) @V
GS
= 10V. Id = 0.5A
R
DS(ON)
= 7500mΩ(MAX) @V
GS
= 4.5V. Id = 0.2A
Super High dense cell design for extremely low R
DS(ON) .
Reliable and Rugged.
SOT-23 for Surface Mount Package.
SOT-23
A
pplications
●
Power Management in Desktop Computer or DC/DC Converters .
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
T
A
=25℃ Unless Otherwise noted
Symbol
V
DS
V
GS
I
D
Limit
60
±20
0.5
Units
V
V
A
Electrical Characteristics
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BVDSS
IDSS
IGSSF
IGSSR
T
A
=25℃ Unless Otherwise noted
Symbol
Test Conditions
Min
Typ.
Max
Units
VGS=0V, ID=10µA
VDS=60V, VGS=0V
VGS=20V, VDS=0V
VGS=-20V, VDS=0V
60
-
-
-
-
-
-
-
-
1
100
-100
V
µA
nA
nA
On Characteristics
Gate Threshold Voltage
Static Drain-source
RDS(ON)
On-Resistance
VGS =4.5V, ID =0.2A
-
5250
7500
mΩ
VGS(th)
VGS= VDS, ID=250µA
VGS =10V, ID =0.5A
1
-
-
4500
2.5
7500
V
mΩ
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=0.2A
2.5
V
１
JinYu
semiconductor
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