1SS389
SOD-523
SCHOTTKY BARRIER DIODE
FEATURES
High Speed
High Reliability
Small Package
Low Forward Voltage
APPLICATIONS
High Speed Switching
MARKING: S4
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
Symbol
V
R
I
O
I
FM
I
FSM
P
D
R
θJA
T
j
T
stg
DC Blocking Voltage
Continuous Forward Current
Peak Forward Current
Non-repetitive Peak Forward Surge Current @10ms
Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Parameter
Value
10
100
200
1
150
667
125
-55~+150
Unit
V
mA
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Symbol
V
(BR)
I
R
V
F
I
R
=100μA
V
R
=10V
I
F
=1mA
I
F
=5mA
I
F
=100mA
Total capacitance
C
tot
V
R
=0V,f=1MHz
0.18
0.3
0.5
40
pF
V
Test conditions
Min
10
20
Typ
Max
Unit
V
μA
１
JinYu
semiconductor
www.htsemi.com
Ｄ�½��½��½�：２０１１／０５
HTSEMI [ SHENZHEN JIN YU SEMICONDUCTOR CO., LTD. ]
