1SS226
SOT-23
FEATURES
Low forward voltage : V
F
(3) = 0.9V (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Small total capacitance : C
T
= 0.9pF (typ.)
MARKING: C3
Maximum Ratings ,Single Diode @T
A
=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Symbol
V
RM
V
RRM
V
RWM
V
R
I
FM
I
O
I
FSM
P
D
T
J
T
STG
300
100
2
mA
mA
A
mW
℃
℃
80
V
Limits
85
Unit
V
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=10ms
Power Dissipation
Junction temperature
Storage temperature
150
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage
Forward
Diode
voltage
capacitance
leakage current
Symbol
V
(BR)
I
R
V
F
C
D
t
rr
Test
conditions
MIN
80
0.5
1.2
3
4
MAX
UNIT
V
uA
V
pF
nS
I
R
= 100uA
V
R
=80V
I
F
=100mA
V
R
=0V , f=1MHz
I
F
=10mA
Reverse recovery time
１
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semiconductor
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