HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
On-Region Characteristic
10
1.6
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 3/6
Typical On-Resistance & Drain Current
Drain-Source On-Resistance-R
DS(ON)
V
GS
=10V
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
GS
=10V
9
ID, Drain-Source Current (A)
.
8
7
V
GS
=8V
V
GS
=6V
6
5
V
GS
=5V
4
3
2
1
0
0
2
4
6
8
10
V
GS
=4
0
1
2
3
4
5
6
7
8
9
10
11
12
VDS, Drain-Source Voltage(V)
Drain Current-I
D
(A)
Drain Current Variation with Gate Voltage &
Temperature
6
V
DS
=10 V
5
Typical On-Resistance & Drain Current
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
Tc= 25°C
4
Drain-Source On-Resistance-R
DS(ON)
Drain-Source Current-I
D
(A)
3
V
GS
=10V
V
GS
=15V
2
1
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
1
2
3
4
5
6
7
8
9
10
11
12
Gate-Source Voltage-V
GS
(V)
Drain Current-I
D
(A)
On Resistance Variation with Temperature
2.50
V
GS
=10 V
Capacitance Characteristics
2000
Normalized Drain-Source On-
Resistance-R
DS(ON)
2.00
1500
Capacitance (pF)
Ciss
Coss
Crss
500
1.50
I
D
=3A
1000
1.00
0.50
0.00
0
25
50
75
100
o
Case Temperature-Tc ( C)
125
150
0
0.1
1
10
100
V
DS
, Deain-Source Voltage (V)
H06N60U, H06N60E, H06N60F
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
