HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6726-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
HTIP47
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP47 is designed for high voltage switch switching
applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................. -50 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 350 V
BVCEO Collector to Emitter Voltage................................................................................. 250 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
IEBO
ICEO
ICES
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
350
250
5
-
-
-
-
-
30
10
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
1
1
1
1.5
150
-
-
Unit
V
V
V
mA
mA
mA
V
V
Test Conditions
IC=1mA
IC=30mA
IE=0.1mA
VEB=5V
VCE=150V
VCE=350V
IC=1A, IB=0.2A
IC=1A, VCE=10V
IC=0.3A, VCE=10V
IC=1A, VCE=10V
IC=0.2A, VCE=10V, f=2MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification