HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6721
Issued Date : 1993.09.24
Revised Date : 2002.03.04
Page No. : 1/3
HTIP31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP31C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings
(Ta=25°C)
TO-220
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
ICES
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Min.
100
100
-
-
-
-
-
25
10
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
300
1
1.2
1.8
-
50
-
Unit
V
V
uA
uA
mA
V
V
Test Conditions
IC=1mA, IE=0
IC=30mA, IC=0
VCE=100V, IB=0
VCE=60V, IB=0
VEB=5V, IC=0
IC=3A, IB=375mA
IC=3A, VCE=4V
IC=1A, VCE=4V
IC=3A, VCE=4V
IC=0.5A, VCE=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HTIP31C
HSMC Product Specification