HTIP117D 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HD200204

Issued Date : 2002.04.01

Revised Date : 2005.08.18

Page No. : 1/4

HTIP117D

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP117D is designed for use in general purpose amplifier and low-speed

switching applications.

TO-126ML

Darlington Schematic

C

Absolute Maximum Ratings

(T

A

=25°C)

•

Maximum Temperatures

Storage Temperature ................................................................... -55 ~ +150

°C

Junction Temperature .......................................................... +150

°C

Maximum

B

R1

R2

E

•

Maximum Power Dissipation

Total Power Dissipation (T

C

=25°C) .................................................................................................................... 10 W

•

Maximum Voltages and Currents

BV

CBO

Collector to Base Voltage ...................................................................................................................... -100 V

BV

CEO

Collector to Emitter Voltage ................................................................................................................... -100 V

BV

EBO

Emitter to Base Voltage............................................................................................................................. -5 V

I

C

Collector Current (Continue) ............................................................................................................................ -4 A

I

CP

Collector Current (Peak) ................................................................................................................................. -6 A

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

I

CBO

I

CEO

I

EBO

*V

CE(sat)

*V

BE(on)

*h

FE1

*h

FE2

Cob

Min.

-100

-100

-

-

-

-

-

1

500

-

Typ.

-

-

-

-

-

-

-

-

-

-

Max.

-

-

-1

-2

-2

-2.5

-2.8

-

-

200

pF

Unit

V

V

mA

mA

mA

V

V

K

I

C

=-1mA

I

C

=-30mA

V

CB

=-100V

V

CE

=-50V

V

EB

=-5V

I

C

=-2A, I

B

=-8mA

I

C

=-2A, V

CE

=-4V

I

C

=-1A, V

CE

=-4V

I

C

=-2A, V

CE

=-4V

V

CB

=-10V, f=0.1MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

HTIP117D

HSMC Product Specification