HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9216-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
HTIF127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIF127 is designed for use in general purpose amplifier and
low-speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 45 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current (Pulse)................................................................................................. -8 A
IC Collector Current (Continuous)........................................................................................ -5 A
IB Base Current ............................................................................................................ -120 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
*BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Min.
-100
-100
-
-
-
-
-
-
1
1
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-200
-500
-2
-2
-4
-2.5
-
-
Unit
V
V
uA
uA
mA
V
V
V
K
K
Test Conditions
IC=-1mA
IC=-100mA
VCB=-100V
VCE=-50V
VEB=-5V
IC=-3A, IB=-12mA
IC=-5A, IB=-20mA
IC=-3A, VCE=-3V
IC=-0.5A, VCE=-3V
IC=-3A, VCE=-3V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
