HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics
(Ta=25°C, unless otherwise stated,)
Symbol
I
GT
I
L
I
H
V
TM
V
GT
I
D
Parameter
Gate Trigger Current (V
D
=12V)
Latching Current
I
GT
,Tj=25°C)
Holding Current(I
T
=0.1A,)
On-state Voltage
(I
T
=8.5A,)
Gate Trigger Voltage
(V
D
=12V, Tj=25°C)
Off-state Leakage Current T
C
=25°C
(V
D
= V
DRM
(max))
T
C
=125°C
200
400
Critical rate of rise of off-state voltage
dV
D
/dt
V
DM
=400VTj= 125°C; exponential
waveform; gate open circuit
(I
T
=1.2
Quadrant
I - II - III
IV
I - III- IV
II
Spec. No. : HE200905
Issued Date : 2009.08.17
Revised Date :
Page No. : 2/4
Rank min
C
B
Rank max
C
25
50
40
80
25
1.55
1.5
10
1
B
50
100
50
100
50
Unit
mA
mA
mA
mA
mA
V
V
uA
mA
V/us
ALL
Thermal Resistances
Symbol
Rth j-c
Parameter
Thermal resistance junction to mounting base
Min.
Typ
1.4
Max.
Unit
°C/W
HST16
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
