HSD882S_06 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6544

Issued Date : 1992.11.25

Revised Date : 2006.07.28

Page No. : 1/5

HSD882S

NPN Epitaxial Planar Transistor

Description

The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay

driver.

TO-92

Absolute Maximum Ratings

•

Maximum Temperatures

Storage Temperature.............................................................................................................................................. -55 ~ +150

°C

Junction Temperature ........................................................................................................................................ 150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) .................................................................................................................................. 750 mW

•

Maximum Voltages and Currents (T

A

=25°C)

V

CBO

Collector to Base Voltage .............................................................................................................................................. 40 V

V

CEO

Collector to Emitter Voltage........................................................................................................................................... 30 V

V

EBO

Emitter to Base Voltage ................................................................................................................................................... 5 V

I

C

Collector Current.................................................................................................................................................................. 3 A

Electrical Characteristics

(T =25°C)

A

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

*V

CE(sat)

*V

BE(sat)

*h

FE1

*h

FE2

f

T

Cob

Min.

40

30

5

-

-

-

-

30

160

-

-

Typ.

-

-

-

-

-

-

-

-

-

90

45

Max.

-

-

-

1

1

0.5

2

-

500

-

-

Unit

V

V

V

uA

uA

V

V

I

C

=100uA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10uA, I

C

=0

V

CB

=30V, I

E

=0

V

EB

=3V, I

C

=0

I

C

=2A, I

B

=200mA

I

C

=2A, I

B

=200mA

V

CE

=2V, I

C

=20mA

V

CE

=2V, I

C

=1A

MHz

pF

Test Conditions

V

CE

=5V, I

C

=0.1A, f=100MHz

V

CB

=10V, f=1MHz, I

E

=0

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Classification of h

FE2

Rank

Range

P

160-320

E

250-500

HSD882S

HSMC Product Specification