HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6535
Issued Date : 1992.11.25
Revised Date : 2002.02.08
Page No. : 1/4
HSD468
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD468 is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
TO-92
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 25 V
VCEO Collector to Emitter Voltage ...................................................................................... 20 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE
fT
Cob
Min.
25
20
5
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
190
22
Max.
-
-
-
1
500
1
240
-
-
Unit
V
V
V
uA
mV
V
MHz
pF
Test Conditions
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=20V, IE=0
IC=0.8A, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
B
85-170
C
120-240
HSD468
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
