HSD2118J 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HJ200205

Issued Date : 2002.04.01

Revised Date : 2005.07.14

Page No. : 1/5

HSD2118J

LOW V

CE(sat)

TRANSISTOR (20V, 5A)

Feature

•

Low V

CE(sat)

, V

CE(sat)

=0.6V(Typ.)(I

C

=4A/I

B

=0.1A)

•

Excellent DC Current Gain Characteristic

•

Complements the HSB1386J

TO-252

Structure

Epitaxial Planar Type NPN Silicon Transistor

Absolute Maximum Ratings

(T

A

=25°C)

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ..................................................................................................................... 150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation (T

A

=25°C) ...................................................................................................................... 1 W

Total Power Dissipation (T

C

=25°C) .................................................................................................................... 10 W

•

Maximum Voltages and Currents (T

A

=25°C)

V

CBO

Collector to Base Voltage ........................................................................................................................... 50 V

V

CEO

Collector to Emitter Voltage ........................................................................................................................ 20 V

V

EBO

Emitter to Base Voltage ................................................................................................................................ 6 V

I

C

Collector Current ............................................................................................................................................... 5 A

I

C

Collector Current (Pulse) .................................................................................................................................. 10 A

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

*V

CE(sat)

1

*hFE

fT

Cob

Min.

50

20

6

-

-

-

180

-

-

Typ.

-

-

-

-

-

0.6

-

150

30

Max.

-

-

-

0.5

0.5

1

620

-

-

MHz

pF

Unit

V

V

V

uA

uA

V

I

C

=50uA

I

C

=1mA

I

E

=50uA

V

CB

=40V

V

EB

=5V

I

C

/I

B

=4A/0.1A

V

CE

=2V, I

C

=0.5A

V

CE

=6V, I

E

=-50mA, f=100MHz

V

CE

=20V, I

E

=0A, f=1MHz

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

Classification of hFE

Rank

Range

R

180-390

E

370-620

HSD2118J

HSMC Product Specification