HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6739-C
Issued Date : 1994.05.18
Revised Date : 1999.08.01
Page No. : 1/3
HSC4242
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC4242 is designed for triple diffused planar type and high
speed switching applications.
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 450 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ......................................................................................... 10 V
IC Collector Current .............................................................................................................. 7 A
IB Base Current .................................................................................................................... 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Min.
450
400
10
-
-
-
-
15
10
10
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.8
1.2
55
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
IC=1mA, IE=0
IC=100mA, IB=0
IE=1mA, IC=0
VCB=450V, IE=0
VEB=10V, IC=0
IC=4A, IB=0.8A
IC=4A, IB=0.8A
IC=0.8A, VCE=5V
IC=2A, VCE=5V
IC=4A, VCE=5V
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE1
Rank
Range
A
15-28
B1
22-35
B2
29-42
B3
36-49
B4
43-55
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
