HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6527-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 1/3
HSC2228Y
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2228Y is designed for high voltage amplifier applications.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ..................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 160 V
VCEO Collector to Emitter Voltage ................................................................................... 160 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ........................................................................................................ 50 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Min.
160
160
5
-
-
-
-
60
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
1
1
0.6
1
320
-
4
Unit
V
V
V
uA
uA
V
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=160V, IE=0
VEB=5V
IC=2mA, IB=20mA
IC=2mA, IB=20mA
VCE=10V, IC=10mA
VCE=30V, IC=10mA
VCB=10V, f=1MHZ
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
Classification of hFE
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
