HSB649T 参数 Datasheet PDF下载

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HT200103

Issued Date : 2001.12.01

Revised Date : 2005.12.02

Page No. : 1/4

HSB649T

SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Description

Low frequency power amplifier.

Absolute Maximum Ratings

(T

A

=25°C)

TO-126

•

Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150

°C

Junction Temperature ................................................................................................................... +150

°C

Maximum

•

Maximum Power Dissipation

Total Power Dissipation ....................................................................................................................................... 1 W

Total Power Dissipation (T

C

=25°C) .................................................................................................................... 20 W

•

Maximum Voltages and Currents

BV

CBO

Collector to Base Voltage...................................................................................................................... -180 V

BV

CEO

Collector to Emitter Voltage................................................................................................................... -160 V

BV

EBO

Emitter to Base Voltage............................................................................................................................. -5 V

I

C

Collector Current (DC) .................................................................................................................................. -1.5 A

I

C

Collector Current (Pulse).................................................................................................................................. -3 A

Thermal Characteristics

R

θJC

Thermal Resistance, Junction to Case (Max.)..................................................................................... 6.25

°C/W

Electrical Characteristics

(T

A

=25°C)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

*V

CE(sat)

*V

BE(on)

*h

FE1

*h

FE2

f

T

Cob

Min.

-180

-160

-5

-

-

-

100

30

-

-

Typ.

-

-

-

-

-

-

-

-

140

27

Max.

-

-

-

-10

-1

-1.5

200

-

-

-

MHz

pF

Unit

V

V

V

uA

V

V

I

C

=-1mA, I

E

=0

I

C

=-10mA, I

B

=0

I

E

=-1mA, I

C

=0

V

CB

=-160V, I

E

=0

I

C

=-500mA, I

B

=-50mA

I

C

=-150mA, V

CE

=-5V

I

C

=-150mA, V

CE

=-5V

I

C

=-500mA, V

CE

=-5V

I

C

=-150mA ,V

CE

=-5V

V

CB

=-10V, f=1MHz, I

E

=0

*Pulse Test: Pulse Width

≤380us,

Duty Cycle≤2%

Test Conditions

Classification Of hFE1

Rank

Range

C

100-200

HSB649T

HSMC Product Specification