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HSB1109S 参数 Datasheet PDF下载

HSB1109S图片预览
型号: HSB1109S
PDF下载: 下载PDF文件 查看货源
内容描述: PNP外延平面晶体管 [PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 4 页 / 40 K
品牌: HSMC [ HI-SINCERITY MOCROELECTRONICS ]
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 2/4
Saturation Voltage & Collector Current
1000
125 C
o
Saturation Voltage (mV)
75 C
100
125 C
o
o
hFE
25 C
100
75 C
o
o
25 C
o
hFE @ V
CE
=5V
V
CE(sat)
@ I
C
=10I
B
10
10
1
10
100
0.1
1
10
100
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
ON Voltage & Collector Current
1000
Output Capacitance &
Reverse-Blased Voltage
20
25 C
o
Output Capacttance-Cob (pF)
100
ON Voltage (mV)
15
75 C
125 C
o
o
10
5
V
BE(ON)
@ V
CE
=5V
100
0.1
1
10
0
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Reverse-Biased-V
CB
(V)
Cutoff Frequency & Collector Current
1000
1000
Safe Operating Area
Cutoff Frequency (MHz)
100
Collector Current (mA)
100
10
10
1
0.1
1
10
100
1000
1
1
10
100
1000
Collector Current-I
C
(mA)
Forward Biased Voltage (V)
HSB1109S
HSMC Product Specification