HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6334-B
Issued Date : 1992.11.18
Revised Date : 2000.10.01
Page No. : 1/3
HMPSA43
NPN SILICON TRANSISTOR
Description
The HMPSA43 is high voltage transistor.
Features
•
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
For Complementary Use with PNP Type HMPSA93
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 200 V
VCEO Collector to Emitter Voltage ................................................................................... 200 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
200
200
6
-
-
-
-
25
40
40
50
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
350
900
-
-
-
-
4
Unit
V
V
V
nA
nA
mV
mV
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=200V, IE=0
VEB=6V, IC=0
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=10mA, VCE=20V, f=100MHZ
VCB=20V, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Classification Of hFE2 & V
CE(sat)
Rank
NS
N
hFE1
>80
>25
hFE2
>120
>40
hFE3
>120
>40
VCE(sat)
<200mV
<350mV
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
