HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6305
Issued Date : 1992.09.09
Revised Date : 2002.02.21
Page No. : 1/4
HMPSA14
NPN SILICON TRANSISTOR
Description
The HMPSA14 is designed for applications requiring extremely high
current gain collector current to 500mA.
Features
•
High D.C current Gain
•
HMPSA14 Complementary to HMPSA64
TO-92
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCES Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage ............................................................................................ 10 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=0.1mA, VBE=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=10V, IC=0
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
IC=10mA, VCE=5V
IC=100mA, VCE=5V
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HMPSA14
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
