HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6317-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HMPS751
PNP SILICON TRANSISTOR
Description
Amplifier Transistor
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCEO Collector to Emitter Voltage .................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................. -2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
-80
-60
-5
-
-
-
-
-
-
75
75
75
40
75
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-0.1
-0.1
-0.5
-0.3
-1.2
-1
-
-
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-10uA, IE=0
VCB=-80V, IE=0
VEB=-4V, IC=0
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
IC=-1A, VCE=-2V
IC=-50mA, VCE=-2V
IC=-500mA, VCE=-2V
IC=-1A, VCE=-2
IC=-2A, VCE=-2V
VCE=-5V, IC=-50mA, f=100MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
