HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6327-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
HMPS650
NPN SILICON TRANSISTOR
Description
The HMPS650 is designed for audio transistor.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 40 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current .............................................................................................................. 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
ft
Min.
40
60
5
-
-
-
-
-
-
75
75
75
40
75
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.5
0.3
1
1.2
-
-
-
-
-
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VEB=4V, IC=0
IC=2A, IB=200mA
IC=1A, IB=100mA
VCE=2V, IC=1A
IC=1A, IB=100mA
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
VCE=2V, IC=2A
VCE=5V, IC=50mA, f=100MHz
MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
