HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200207
Issued Date : 1993.04.12
Revised Date : 2002.08.14
Page No. : 1/4
HMJE13007
NPN EPITAXIAL PLANAR TRANSISTOR
Description
•
High Voltage, High Speed Power Switch
•
Switch Regulators
•
PWM Inverters and Motor Controls
•
Solenoid and Relay Drivers
•
Deflection Circuits
TO-220
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature ...................................................................................... 150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 80 W
•
Maximum Voltages and Currents (Ta=25°C)
VCEX Collector to Emitter Voltage .................................................................................... 700 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................... Continuous 8 A
IB Base Current .................................................................................................. Continuous 4 A
Characteristics
(Ta=25°C)
Symbol
BVCEX
BVCEO
IEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
Min.
700
400
-
-
-
-
-
-
-
10
6
10
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
100
100
1
2
3
1.2
1.6
-
-
30
Unit
V
V
uA
uA
V
V
V
V
V
Test Conditions
IC=1mA, VBE(off)=1.5V
IC=10mA
VEB=9V
VCE=700V, VBE(off)=1.5V
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=8A, IB=2A
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=2A, VCE=5V
IC=5A, VCE=5V
IC=0.5A, VCE=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMJE13007
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
