HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13003T is designed for high voltage. High speed switching
inductive circuits and amplifier applications.
Features
•
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
TO-126
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
•
Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC) ...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
Min.
600
400
8
-
-
-
-
-
-
10
10
6
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=600V, IE=0
VBE=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMJE13003T
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
