HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6811
Issued Date : 1997.12.31
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8599
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Amplifier Transistor
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -80 V
VCEO Collector to Emitter Voltage..................................................................................... -80 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
VBE(on)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
-80
-80
5
-
-
-
-
-
-600
100
100
75
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-100
-100
-100
-400
-300
-800
300
-
-
-
4.5
Unit
V
V
V
nA
nA
nA
mV
mV
mV
Test Conditions
IC=-100uA
IC=-10mA
IE=-10uA
VCB=-80V
VCE=-60V
VEB=-4V
IC=-100mA, IB=-5mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
HMBT8599
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
