HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6813
Issued Date : 1997.08.11
Revised Date : 2002.10.25
Page No. : 1/3
HMBT8550
PNP EPITAXIAL TRANSISTOR
Description
The HMBT8550 is designed for general purpose amplifier
applications.
Features
•
High DC Current: hFE=150-400 at IC=150mA
•
Complementary to HMBT8050
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -25 V
VCEO Collector to Emitter Voltage..................................................................................... -20 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE
ft
Cob
Min.
-25
-20
-5
-
-
-
-
100
150
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-1
-100
-500
-1
500
-
10
Unit
V
V
V
uA
nA
mV
V
MHz
pF
Test Conditions
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
VEB=-6V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
B9C
100-200
B9D
150-300
B9E
250-500
HMBT8550
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
