HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6846
Issued Date : 1995.07.21
Revised Date : 2002.10.25
Page No. : 1/3
HMBT6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
SOT-23
•
Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150
°C
Junction Temperature.................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage............................................................................................ 12 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
VBE(on)
*hFE1
*hFE2
*hFE3
Cob
Min.
40
40
12
-
-
-
-
-
-
-
10
20
14
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
1
50
1.2
1.5
2
1.75
100
200
140
7
Unit
V
V
V
nA
uA
nA
V
V
V
V
K
K
K
pF
Test Conditions
IC=100uA
IC=10mA
IE=10uA
VCB=30V
VCB=25V
VEB=10V
IC=50mA, IB=0.5mA
IC=500mA, IB=0.5mA
IC=500mA, IB=0.5mA
VCE=5V, IC=50mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMBT6427
HSMC Product Specification
HSMC [ HI-SINCERITY MOCROELECTRONICS ]
